Resistive random-access memory (ReRAM or RRAM) is a kind of non-volatile (NV) random-entry (RAM) pc memory that works by altering the resistance throughout a dielectric stable-state materials, often referred to as a memristor. One major benefit of ReRAM over other NVRAM technologies is the flexibility to scale below 10 nm. ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and section-change memory (PCM) in that they alter dielectric material properties. CBRAM entails one electrode offering ions that dissolve readily in an electrolyte material, while PCM involves producing sufficient Joule heating to impact amorphous-to-crystalline or crystalline-to-amorphous part modifications. By contrast, ReRAM involves generating defects in a thin oxide layer, often called oxygen vacancies (oxide bond locations the place the oxygen has been eliminated), which might subsequently cost and drift beneath an electric subject. The movement of oxygen ions and vacancies within the oxide could be analogous to the movement of electrons and holes in a semiconductor. Though ReRAM was initially seen as a substitute know-how for flash Memory Wave Workshop, the price and efficiency advantages of ReRAM have not been sufficient for corporations to proceed with the substitute.

Apparently, a broad vary of supplies can be utilized for Memory Wave Workshop ReRAM. HfO2 can be used as a low-voltage ReRAM has encouraged researchers to investigate more potentialities. RRAM is the registered trademark title of Sharp Company, a Japanese digital parts manufacturer, in some international locations, including members of the European Union. An power-efficient chip called NeuRRAM fixes an previous design flaw to run massive-scale AI algorithms on smaller gadgets, reaching the same accuracy as digital computers, no less than for purposes needing just a few million bits of neural state. As NeuRRAM is an analog technology, it suffers from the identical analog noise problems that plague other analog semiconductors. While this can be a handicap, many neural processors don't need bit-good state storage to do helpful work. In the early 2000s, ReRAMs were under improvement by a number of firms, some of which filed patent purposes claiming varied implementations of this technology. ReRAM has entered commercialization on an initially limited KB-capability scale. In February 2012, Rambus purchased a ReRAM firm referred to as Unity Semiconductor for $35 million.

Panasonic launched a ReRAM evaluation equipment in Could 2012, based mostly on a tantalum oxide 1T1R (1 transistor - 1 resistor) memory cell architecture. In 2013, Crossbar launched an ReRAM prototype as a chip about the dimensions of a postage stamp that might store 1 TB of information. The memory structure (Ag/a-Si/Si) closely resembles a silver-based CBRAM. Also in 2013, Hewlett-Packard demonstrated a memristor-primarily based ReRAM wafer, Memory Wave and predicted that a hundred TB SSDs based mostly on the expertise might be obtainable in 2018 with 1.5 PB capacities out there in 2020, just in time for the cease in progress of NAND flash capacities. Different types of ReRAM have been disclosed, based on totally different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. In 1963 and 1964, a thin-film resistive memory array was first proposed by members of the University of Nebraska-Lincoln. Further work on this new thin-movie resistive memory was reported by J.G. In 1970, members of the Atomic Vitality Research Establishment and College of Leeds tried to explain the mechanism theoretically.

1180 In May 1997, a research group from the University of Florida and Memory Wave Honeywell reported a manufacturing technique for "magneto-resistive random entry memory" by using electron cyclotron resonance plasma etching. Leon Chua argued that all two-terminal non-risky memory gadgets including ReRAM should be thought of memristors. Stan Williams of HP Labs also argued that ReRAM was a memristor. However, others challenged this terminology and the applicability of memristor theory to any bodily realizable system is open to question. Whether or not redox-based mostly resistively switching parts (ReRAM) are lined by the current memristor theory is disputed. Silicon oxide presents an fascinating case of resistance switching. Two distinct modes of intrinsic switching have been reported - surface-primarily based, in which conductive silicon filaments are generated at uncovered edges (which could also be inner-within pores-or exterior-on the floor of mesa buildings), and bulk switching, in which oxygen vacancy filaments are generated inside the majority of the oxide. The former mode suffers from oxidation of the filaments in air, requiring airtight sealing to allow switching.